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Silicon-based photonic chip research weapon laser pointer

LightsaberLaser Sword

Laser Sword with Gatling Laser Pointer Green Blue Red Violet Beam Real Lightsaber

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The chip-level all-optical signal processing capability is essential for the development of a new generation of low-power communication systems, and the considerable nonlinear optical effects of silicon-based photonic chips provide an important technical approach for solving on-chip optical functions. Although all-optical signal processing chips based on silicon nanostructures have been widely reported in the communication band (near 1550nm), the strong two-photon absorption of silicon materials at 1550nm significantly limits its application potential.

Red Light Laser Pointer Pocket

In order to overcome this dilemma, in recent years, the research on silicon optical chips has gradually moved to the long wavelength direction. When the pump wavelength is greater than 2150nm, the two-photon absorption effect from silicon materials can be effectively suppressed, so the performance of optical function chips (especially Conversion efficiency) can be greatly improved. At present, the ultrafast laser pointer pump source commonly used in silicon photonic chip research is a complex and expensive OPO device based on a sapphire solid-state laser (typically priced at RMB 1.5-2 million and requires a water-cooled box).

On the one hand, the power of this type of laser is significantly attenuated above 2000nm (usually tens of mW of available power), making the peak power not meet the threshold requirements of infrared nonlinear research; on the other hand, this type of laser has a free space output, which is comparable to large The single-mode fiber output desired by most photonic chip research is not compatible. Wavelength conversion device based on the nonlinear effect of silicon photonic chip. It is a tunable ultrafast laser especially suitable for silicon-based photonic chip research. It has broadband wavelength tunability in the 2μm band, and can realize a hundred femtosecond pulse width output of any wavelength in the range of 2000-2350 nm, and the output power in the whole band is higher than 300 mW.

The product adopts a fine dispersion management design and strict nonlinear effect control. The overall structure adopts a full polarization maintaining design, and the output terminal is a standard polarization maintaining jumper output to ensure the stable operation of the green laser pointer and the high efficiency of the photonic chip coupling. Wavelength control can be finely controlled through the front panel knob, or back-end control through software. It has made up for the lack of silicon photonics research band fiber lasers on the market, and has exchanged functions similar to expensive systems with ultra-high cost performance, and has become a sharp sword in the hands of silicon photonics researchers. It is also an ideal choice for research users such as infrared supercontinuum and infrared pump-detection.

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